E111 - Siliconix

E111 n-channel JFET

-C'? n-channel JFETs &II C'4 designed for • • • -&II Analog Switches -- •• &II Choppers • Commutators H Performance Curves NC See Section 4 BENEFITS • Low Insertion Loss RDS(on) <30n (Elll) • No Offset or Error Voltages Generated by Closed Switch Purely Resistive High Isolation Resistance from Driver • Fast Switching tD(on) + tr = 13 ns Typical • Short Samp.

Features

Ell1 E112 E'13 Unit Min TV. Max Min TV. Max Min Tv. Max Test Conditions 1 'GSS Gate Reverse Current (Note 1) '"2 S I-T VGS(off) Gate-Source Cutoff Voltage -3 3 A BVGSS Gate-Source Breakdown Voltage
·35
·1
·10 -1
·35 -1 -5 -0.5
·35
·1 nA -3 V VOS-O,VGS--15V Vos - 5 V. 10 - 1 JlA VOS -0, IG - -1 JlA 14T Is' I-C 6 IDSS ICloff) rOSlon Saturation Drain Current (Note 2 20 Drain Cutoff Current (Note 1) Drain"Source ON Resistance 5 1 30 2 1 50 rnA VOS = 15 V, VGS = 0 1 nA VOS-5V,VGS--l0V 100 II VOS" 0.1 V, VGS = a 7 Cd.'oft) '8: - 0 Csg(off) V 9N Cdg(on) + .;710 A Csg{on) M.