DTS2319 - Din-Tek

DTS2319 P-Channel MOSFET

P-Channel 20-V (D-S) MOSFET DTS2319 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.018 at VGS = - 4.5 V 0.027 at VGS = - 2.5 V ID (A) - 9a - 6a Qg (Typ.) 20 nC S G R FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performanc.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 1800 V
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Portable Devices - Load Switch - Battery Switch - Charger Switch D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Tempera.