DTS2318 - Din-Tek

DTS2318 N-Channel MOSFET

N-Channel 20-V (D-S) MOSFET DTS www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0095 at VGS = 10 V 20 0.0105 at VGS = 4.5 V ID (A)a, g 12 10 Qg (Typ.) 7.3 nC (SOT-23) G1 S2 3D Top View D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % U.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• DC/DC Conversion
• POL ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA =.