DTS1004 - Din-Tek

DTS1004 N-Channel MOSFET

N-Channel 100 V (D-S) MOSFET DTS1004 www.din-tek.jp MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.120 at VGS = 10 V 2.3 100 0.140 at VGS = 6 V 2.1 0.150 at VGS = 4.5 V 1.7 Qg (Typ.) 2.9 nC G1 S2 3D FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters • Load S.

Features

• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Material categorization: APPLICATIONS
• DC/DC Converters
• Load Switch
• LED Backlighting in LCD TVs ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Po.