DTP9803 - Din-Tek

DTP9803 P-Channel MOSFET

P-Channel 100 V (D-S) MOSFET DTP9803 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. 0.214 at VGS = - 10 V 0.221 at VGS = - 4.5 V ID (A) - 18 - 14 Qg (Typ.) 37 TO-220AB S G FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICAT.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters GD S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Diss.