DTP10N60SJ - Din-Tek

DTP10N60SJ N-Channel Super Junction Power MOSFET

DTP10N60SJ/DTP10N60FSJ/DTU10N60SJ/DTL10N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600 RDS(on) max. at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) VGS = 10 V 35 3 3.7 Configuration Single 0.47 TO-220AB TO-220 FULLPAK FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Cis.

Features

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS) APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
• Industrial TO-252 TO-251 D G GD S Top View GDS Top View GDS Top View GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-So.