DTP9604F - Din-Tek

DTP9604F N-Channel MOSFET

DTP9604/DTP9604F N-Channel 60 V (D-S) MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.027 at VGS = 10 V 0.029 at VGS = 6 V 0.030 at VGS = 4.5 V ID (A)a 55 55 50 Qg (Typ.) 27.5 nC TO-220AB TO-220 FULLPAK D GD S Top View G GDS Top View S N-Channel MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Low Qg for High.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Low Qg for High Efficiency APPLICATIONS
• Primary Side Switch
• POL
• Synchronous Rectifier
• DC/DC Converter
• Amusement System
• Industrial
• LED Backlighting ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C VDS VGS ID Pulsed Drain Current (60 µs Pulse Width) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating.