Fast Recovery Epitaxial Diode (FRED) DSEI 30 IFAVM = 37 A VRRM = 600 V trr = 35 ns VRSM V 640 VRRM V 600 Type DSEI 30-06A TO-247 AD AC C A A = Anode, C = Cathode C Symbol IFRMS IFAVM ÿÿx IFRM IFSM I2t TVJ TVJM Tstg Ptot Md Weight Symbol IR VF VT0 rT RthJC RthCK RthJA trr IRM Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep.
q International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low I -values RM q Soft recovery behaviour q Epoxy meets UL 94V-0 Applications q Antiparallel diode for high frequency switching devices q Anti saturation diode q Snubber diode q Free wheeling diode in converters and motor control circuits q Rectifiers in switch mode power supplies (SMPS) q Inductive heating and melting q Uninterruptible power supplies (UPS) q Ultrasonic cleaners and welders Advantages q High reliability circuit operation q Low voltage peaks .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DSEI30-10A |
IXYS |
Fast Recovery Epitaxial Diode | |
2 | DSEI30-10AR |
IXYS |
Fast Recovery Epitaxial Diode | |
3 | DSEI30-12A |
IXYS |
Fast Recovery Epitaxial Diode | |
4 | DSEI30 |
IXYS |
Fast Recovery Epitaxial Diode | |
5 | DSEI36-06AS |
IXYS |
Fast Recovery Epitaxial Diode | |
6 | DSEI12 |
ETC |
Fast Recovery Epitaxial Diode | |
7 | DSEI12-06A |
Inchange |
Ultrafast Rectifier | |
8 | DSEI12-06A |
IXYS Corporation |
Fast Recovery Epitaxial Diode | |
9 | DSEI12-06AS |
IXYS |
Fast Recovery Epitaxial Diode | |
10 | DSEI12-10A |
IXYS |
Fast Recovery Epitaxial Diode | |
11 | DSEI12-10A |
INCHANGE |
Fast Recovery Diode | |
12 | DSEI12-12A |
IXYS Corporation |
Fast Recovery Epitaxial Diode |