VCC A0–A20 DQ0–DQ7 CE OE WE BW GND - Supply Voltage - Address Inputs - Data I/O - Chip-Enable Input - Output-Enable Input - Write-Enable Input - Battery Warning Output (Open Drain) - Ground DataSheet4U.com Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be.
§ Real-time clock (RTC) keeps track of hundredths of seconds, seconds, minutes, hours, days, date, months, and years with automatic leap-year compensation valid up to the year 2100 2M x 8 NV SRAM Watch function is transparent to RAM operation Automatic data protection during power loss Unlimited write-cycle endurance Surface-mountable BGA module construction Over 10 years of data retention in the absence of power Battery monitor checks remaining capacity daily +3.3V or +5V operation PACKAGE OUTLINE § § § § § § § § Side -A- Shown (For Reference Only, Not to Scale) Component placement may var.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DS1250AB |
Dallas Semiconducotr |
4096k Nonvolatile SRAM | |
2 | DS1250BL |
Dallas Semiconducotr |
4096K Nonvolatile SRAM | |
3 | DS1250W |
Dallas Semiconducotr |
3.3V 4096k Nonvolatile SRAM | |
4 | DS1250Y |
Dallas Semiconducotr |
4096k Nonvolatile SRAM | |
5 | DS1250YL |
Dallas Semiconducotr |
4096K Nonvolatile SRAM | |
6 | DS1251 |
Dallas Semiconducotr |
4096k NV SRAM with Phantom Clock | |
7 | DS1251P |
Dallas Semiconducotr |
4096k NV SRAM with Phantom Clock | |
8 | DS1251Y |
Dallas Semiconducotr |
4096K NV SRAM with Phantom Clock | |
9 | DS1258AB |
Dallas Semiconducotr |
128k x 16 Nonvolatile SRAM | |
10 | DS1258W |
Dallas Semiconducotr |
3.3V 128k x 16 Nonvolatile | |
11 | DS1258Y |
Dallas Semiconducotr |
128k x 16 Nonvolatile SRAM | |
12 | DS1259 |
Dallas Semiconducotr |
Battery Manager Chip |