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A0 - A18 DQ0 - DQ7 CE WE OE VCC GND NC DataSheet4U.com - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+5V) - Ground - No Connect 111999 1 of 11 DataSheet 4 U .com www.DataSheet4U.com DS1250Y/AB DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,28.
PIN ASSIGNMENT 10 years minimum data retention in the A18 VCC 32 1 absence of external power A16 31 A15 2 A14 A17 30 3 Data is automatically protected during power 29 4 WE A12 loss A13 A7 28 5 Replaces 512k x 8 volatile static RAM, A6 27 6 A8 A5 A9 26 7 EEPROM or Flash memory A11 A4 25 8 Unlimited write cycles OE A3 24 9 Low-power CMOS A10 A2 23 10 CE A1 Read and write access times as fast as 70 ns 22 11 21 12 DQ7 A0 Lithium energy source is electrically 13 20 DQ6 DQ0 disconnected to retain freshness until power is 19 14 DQ5 DQ1 applied for the first time DQ2 15 18 DQ4 Full ±10% VCC operatin.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | DS1250BL |
Dallas Semiconducotr |
4096K Nonvolatile SRAM |
|
| 2 | DS1250W |
Dallas Semiconducotr |
3.3V 4096k Nonvolatile SRAM |
|
| 3 | DS1250Y |
Dallas Semiconducotr |
4096k Nonvolatile SRAM |
|
| 4 | DS1250YL |
Dallas Semiconducotr |
4096K Nonvolatile SRAM |
|
| 5 | DS1251 |
Dallas Semiconducotr |
4096k NV SRAM with Phantom Clock |
|
| 6 | DS1251P |
Dallas Semiconducotr |
4096k NV SRAM with Phantom Clock |
|
| 7 | DS1251Y |
Dallas Semiconducotr |
4096K NV SRAM with Phantom Clock |
|
| 8 | DS1254 |
Dallas Semiconducotr |
2M x 8 NV SRAM with Phantom Clock |
|
| 9 | DS1258AB |
Dallas Semiconducotr |
128k x 16 Nonvolatile SRAM |
|
| 10 | DS1258W |
Dallas Semiconducotr |
3.3V 128k x 16 Nonvolatile |
|
| 11 | DS1258Y |
Dallas Semiconducotr |
128k x 16 Nonvolatile SRAM |
|
| 12 | DS1259 |
Dallas Semiconducotr |
Battery Manager Chip |
|