DP10N60 - Developer Microelectronics

DP10N60 N-Channel MOSFET

MAIN CHARACTERISTICS ID 10 A VDSS 600 V Rdson-max （Vgs=10V） 0.85Ω Qg-Typ 51.5 nC APPLICATIONS  High efficiency switch mode power supplies  Electronic lamp ballasts based on half bridge  LED LED power supplies FEATURES  Low gate charge  Crss ( 16.9pF) Low Crss (typical 16.9pF )  Fast switching  100% avalanche tested  dv/dt Improve.

Features

 Low gate charge
 Crss ( 16.9pF) Low Crss (typical 16.9pF )
 Fast switching
 100% avalanche tested
 dv/dt Improved dv/dt capabilit
 RoHS RoHS product DP10N60 N N-CHANNEL MOSFET Package ORDER MESSAGE Order codes DP10N60 Marking DP10N60 Package TO-220C Halogen Free YES Packaging Tube DP10N60_REV1.0_EN www.depuw.com 1 .