E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom design • Flexible pin configuration, max. 50 pins • Dimensions: – Size: 45×107.5 mm – Pitch: 3.81 mm • Up to 690 V line voltage • Up to 10 kW DANFOSS SILICON POWER Free Datasheet http://www.Datasheet4U.com E2 I.
01623 PIM brake NTC DP10H600T 101622 DP15H600T 101621 DP20H600T 101620 DP30H600T 101619 DP50H600T
* 1016xx DP10H1200T 101618 DP15H1200T 101617 DP25H1200T 101616 -
* Types under development. Custom circuits and configurations on request.
Outline
Circuit configuration
Danfoss Silicon Power GmbH
• Heinrich-Hertz-Straße 2
• 24837 Schleswig
• Germany Tel.: +49 4621 9512-0
• Fax: +49 4621 9512-310
• E-mail: [email protected]
• http://siliconpower.danfoss.com
Danfoss can accept no responsibility for possible errors in catalogues, brochures and other printed material. Danfoss reserves the right t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DP10D1200T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
2 | DP100 |
AUK |
PNP Silicon Transistor | |
3 | DP100S |
AUK |
PNP Silicon Transistor | |
4 | DP104 |
ETC |
DP104 | |
5 | DP10E1200T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
6 | DP10E600T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
7 | DP10F1200T101625 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
8 | DP10F600T101629 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
9 | DP10H1200T101618 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
10 | DP10H600T101622 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
11 | DP10N60 |
Developer Microelectronics |
N-Channel MOSFET | |
12 | DP121ET |
Dopoint |
LCD |