Semiconductor DP100S PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400mA/-20mA) • Suitable for low voltage large current drivers • Complementary pair with DN100S • Switching Application Ordering Information Type NO. DP100S Marking P03 Package Code SOT-23F Outline Dimensions 2.4±.
• Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC /IB =-400mA/-20mA)
• Suitable for low voltage large current drivers
• Complementary pair with DN100S
• Switching Application
Ordering Information
Type NO. DP100S Marking P03 Package Code SOT-23F
Outline Dimensions
2.4±0.1 1.6±0.1
unit : mm
1
2.9±0.1 1.90 BSC
3 2
0.15±0.05 0~0.1 0.4±0.05 0.9±0.1
PIN Connections 1. Base 2. Emitter 3. Collector
KST-2118-000
1
DP100S
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector di.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DP100 |
AUK |
PNP Silicon Transistor | |
2 | DP104 |
ETC |
DP104 | |
3 | DP10D1200T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
4 | DP10D600Tx1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
5 | DP10E1200T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
6 | DP10E600T*1016xx |
Danfoss Silicon Power GmbH |
E2 IGBT | |
7 | DP10F1200T101625 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
8 | DP10F600T101629 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
9 | DP10H1200T101618 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
10 | DP10H600T101622 |
Danfoss Silicon Power GmbH |
E2 IGBT | |
11 | DP10N60 |
Developer Microelectronics |
N-Channel MOSFET | |
12 | DP121ET |
Dopoint |
LCD |