DMP1018UCB9 - Diodes

DMP1018UCB9 P-Channel MOSFET

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Applications  DC-DC Converters  Battery Management  Load Switc.

Features

 LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching
 Vgs(th) = -0.8V typ. for a Low Turn-On Potential
 CSP with Footprint 1.5mm × 1.5mm
 Height = 0.62mm for Low Profile
 ESD = 3kV HBM Protection of Gate
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
 Case: U-WLB1515-9
 Terminal Connections: See Diagram Below GSS ESD PROTECTED TO 3kV S SS D DD Top-View Pin Configuration Equ.