DMP1008UCB9 - DIODES

DMP1008UCB9 P-CHANNEL MOSFET

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. Features  LD-MOS Technology with the Lowest Figure of Merit: .

Features

 LD-MOS Technology with the Lowest Figure of Merit:
 RDS(ON) = 5.7mΩ to Minimize On-State Losses
 Qg = 8.2nC for Ultra-Fast Switching
 VGS(TH) = -0.6V Typ. for a Low Turn-On Potential
 CSP with Footprint 1.5mm  1.5mm
 Height = 0.60mm for Low Profile
 ESD Protection of Gate
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local D.