This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area. Features • LD-MOS Technology with the Lowest Figure of Merit: R.
• LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
• Vgs(th) = -0.8V typ. for a Low Turn-On Potential
• CSP with Footprint 1.5mm × 1.5mm
• Height = 0.62mm for Low Profile
• ESD = 6kV HBM Protection of Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Applications
• DC-DC Converters
• Battery Management
• Load Switch
Mechanical Data
• Case: U-WLB1515-9
• Terminal Connections: See Diagram Below
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DMP1012UFDF |
DIODES |
12V P-CHANNEL MOSFET | |
2 | DMP1012USS |
DIODES |
12V P-CHANNEL MOSFET | |
3 | DMP1011LFV |
Diodes |
P-Channel MOSFET | |
4 | DMP1011LFVQ |
DIODES |
P-CHANNEL MOSFET | |
5 | DMP1011UCB9 |
Diodes |
P-Channel MOSFET | |
6 | DMP1018UCB9 |
Diodes |
P-Channel MOSFET | |
7 | DMP1005UFDF |
DIODES |
P-CHANNEL ENHANCEMENT MODE MOSFET | |
8 | DMP1007UCB9 |
DIODES |
P-CHANNEL MOSFET | |
9 | DMP1008UCA9 |
DIODES |
P-CHANNEL MOSFET | |
10 | DMP1008UCB9 |
DIODES |
P-CHANNEL MOSFET | |
11 | DMP1009UFDF |
DIODES |
12V P-CHANNEL MOSFET | |
12 | DMP1009UFDFQ |
DIODES |
12V P-CHANNEL MOSFET |