DME2851-235 - Skyworks

DME2851-235 Silicon Beam-Lead Schottky Mixer Diodes

The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close im.

Features

 Low 1/f noise
 Low intermodulation distortion
 Hermetically sealed packages
 Statistical process control wafer fabrication
 Packages rated MSL1, 260 C per JEDEC J-STD-020) Description The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages ar.