Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions. Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form .
Low 1/f noise
Low intermodulation distortion
Statistical Process Control wafer fabrication
Skyworks Green™ products are compliant with all applicable legislation and are halogen-free. For additional information, refer to Skyworks Definition of Green™, document number SQ04-0074.
Description
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DME2850-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
2 | DME2850-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
3 | DME2851-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
4 | DME2851-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
5 | DME2851-235 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DME2857-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
7 | DME2857-224 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
8 | DME2857-254 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
9 | DME2858-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
10 | DME2858-224 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
11 | DME2858-254 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
12 | DME2859-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices |