The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close im.
Low 1/f noise
Low intermodulation distortion
Hermetically sealed packages
Statistical process control wafer fabrication
Packages rated MSL1, 260 C per JEDEC J-STD-020)
Description
The Isolink silicon Schottky barrier mixer diodes are designed for applications through 20 GHz. Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control. A variety of forward voltages ar.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | DME2850-255 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
2 | DME2850-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
3 | DME2851-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
4 | DME2851-225 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
5 | DME2851-235 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
6 | DME2857-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
7 | DME2857-224 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
8 | DME2857-254 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
9 | DME2858-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices | |
10 | DME2858-224 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
11 | DME2858-254 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diodes | |
12 | DME2859-000 |
Skyworks |
Silicon Beam-Lead Schottky Mixer Diode Bondable Beam-Lead Devices |