·With TO-220F package ·Complement to type 2SB1367 ·Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ·Collector power dissipation: PC=30W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO .
oltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=100V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 40 20 MIN 100 www.datasheet4u.com 2SD2059 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP MAX UNIT V 2.0 1.5 0.1 1.0 240 V V mA mA 12 100 MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Free Datasheet http://www.datasheet4u.ne.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2050 |
Sanyo |
2SD2050 | |
2 | D2052 |
Panasonic Semiconductor |
2SD2052 | |
3 | D2053 |
SavantIC |
2SD2053 | |
4 | D2053UK |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | D2054UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2057 |
Panasonic |
2SD2057 | |
7 | D2058 |
Fairchild Semiconductor |
KSD2058 | |
8 | D2058 |
Savant |
2SD2058 | |
9 | D20 |
STMicroelectronics |
Memory Micromodules | |
10 | D200 |
uPD |
SIP DC/DC Converters | |
11 | D2001UK |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | D2002 |
Shaoxing Silicore Technology |
Stereo Headphone Amplifier |