D2052 - Panasonic Semiconductor

D2052 2SD2052

Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 s Features q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier q Full-pack .

Features

q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 150 150 5 15 9 100 3 Junction temperature Sto.