·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ·Collector power dissipation: PC=25W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL .
t Collector-emitter saturation voltage IC=2A ;IB=0.2A VBE Base-emitter on voltage IC=0.5A;VCE=5V ICBO Collector cut-off current VCB=60V;IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE DC current gain IC=0.5A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=5V COB Collector output capacitance f=1MHz;VCB=10V Switching times ton Turn-on time ts Storage time tf Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15A hFE Classifications O Y G 60-120 100-200 150-300 Product Specification 2SD2058 MIN TYP. MAX UNIT 60 V 1.5 V 3.0 V 10 µA 1.0 mA 60 3.0 MHz 35 p.
KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2050 |
Sanyo |
2SD2050 | |
2 | D2052 |
Panasonic Semiconductor |
2SD2052 | |
3 | D2053 |
SavantIC |
2SD2053 | |
4 | D2053UK |
Seme LAB |
METAL GATE RF SILICON FET | |
5 | D2054UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2057 |
Panasonic |
2SD2057 | |
7 | D2059 |
SavantIC |
Silicon NPN Power Transistors | |
8 | D20 |
STMicroelectronics |
Memory Micromodules | |
9 | D200 |
uPD |
SIP DC/DC Converters | |
10 | D2001UK |
Seme LAB |
METAL GATE RF SILICON FET | |
11 | D2002 |
Shaoxing Silicore Technology |
Stereo Headphone Amplifier | |
12 | D2002UK |
Seme LAB |
METAL GATE RF SILICON FET |