TetraFET D2015UK METAL GATE RF SILICON FET MECHANICAL DATA A B C O K H I E F J L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND G (4 PLS) N D (2 PLS) M SOT 171 PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 .
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
G (4 PLS) N D
(2 PLS)
M
SOT 171
PIN 1 PIN 3 PIN 5 DIM A B C D E F G H I J K L M N O SOURCE GATE SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13 7.11 PIN 2 PIN 4 PIN 6 Tol. 0.25 0.08 0.08 0.13 0.08 0.08 0.08 0.08 0.08 0.08 0.08 0.13 0.08 0.05 MAX SOURCE DRAIN SOURCE Tol. 0.001 0.003 0.003 0.05 0.003 0.003 0.003 0.003 0.003 0.003 0.003 0.005 0.003 0.002 MAX
APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
– 13 dB MINIMUM
Inches 0.430 0.230 0.100 0.130 dia 0.360 0.120 0.079 0..
Single-Ended RF Silicon Mosfet. 5W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Pow.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2010UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D2011UK |
Seme LAB |
METAL GATE RF SILICON FET | |
3 | D2012 |
STMicroelectronics |
NPN Silicon Power Transistor | |
4 | D2012 |
Wuxi Youda Electronics |
Si NPN Transistor | |
5 | D2012 |
Toshiba Semiconductor |
2SD2012 | |
6 | D2012UK |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | D2013UK |
Seme LAB |
METAL GATE RF SILICON FET | |
8 | D2014UK |
Seme LAB |
RF SILICON FET | |
9 | D2014UK |
TT |
RF Silicon Mosfet | |
10 | D2016 |
Allegro |
2SD2016 | |
11 | D2016UK |
Seme LAB |
METAL GATE RF SILICON FET | |
12 | D2017M |
Sanyo Semicon Device |
FTD2017M |