D2014UK - Seme LAB

D2014UK RF SILICON FET

TetraFET D2014UK MECHANICAL DATA A B C H I EF ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED O K MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 500MHz JL SINGLE ENDED G (4 PLS) N D (2 PLS) SOT 171 PIN 1 SOURCE PIN 2 SOURCE M PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE DIM mm A 10.92 B 5.84 C 2.54 D 3.30 dia E 9.14 F 3.05 .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 17.5W BVDSS Drain
  – Source Breakdown Voltage 65V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 1A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions.