TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED FEATURES I P H G DBC1 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.
I P H G
DBC1 Package
PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source
DIM A B C D E F G H I J K L M N O P Q mm 6.47 0.76 45° 0.76 1.14 2.67 11.73 8.43 7.92 0.20 0.64 0.30 3.25 2.11 6.35SQ 1.65 0.13
PIN 5 Source PIN 6 Gate PIN 7 Gate PIN 8 Source
Tol. 0.08 0.08 5° 0.08 0.08 0.08 0.13 0.08 0.08 0.02 0.02 0.02 0.08 0.08 0.08 0.51 max Inches .255 .030 45° .030 .045 .105 .462 .332 .312 .008 .025 .012 .128 .083 .250SQ .065 .005 Tol. .003 .003 5° .003 .003 .003 .005 .003 .003 .001 .001 .001 .003 .003 .003 .020 max
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D2010UK |
Seme LAB |
METAL GATE RF SILICON FET | |
2 | D2012 |
STMicroelectronics |
NPN Silicon Power Transistor | |
3 | D2012 |
Wuxi Youda Electronics |
Si NPN Transistor | |
4 | D2012 |
Toshiba Semiconductor |
2SD2012 | |
5 | D2012UK |
Seme LAB |
METAL GATE RF SILICON FET | |
6 | D2013UK |
Seme LAB |
METAL GATE RF SILICON FET | |
7 | D2014UK |
Seme LAB |
RF SILICON FET | |
8 | D2014UK |
TT |
RF Silicon Mosfet | |
9 | D2015UK |
Seme LAB |
METAL GATE RF SILICON FET | |
10 | D2015UK |
TT |
RF Silicon Mosfet | |
11 | D2016 |
Allegro |
2SD2016 | |
12 | D2016UK |
Seme LAB |
METAL GATE RF SILICON FET |