D2009UK - Seme LAB

D2009UK METAL GATE RF SILICON FET

TetraFET D2009UK MECHANICAL DATA AD B H C 23 G 1 E 54 F ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL I PIN 1 PIN 3 PIN 5 NM O DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 JK DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 10 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 58W BVDSS Drain
  – Source Breakdown Voltage
* 65V BVGSS Gate
  – Source Breakdown Voltage
* ±20V ID(sat) Drain Current
* 2A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C
* Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-ma.