D2007UK - Seme LAB

D2007UK METAL GATE RF SILICON FET

TetraFET D2007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 4 M 2 D 3 E F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED G HK PIN 1 PIN 3 SOURCE SOURCE IJ DA PIN 2 DRAIN PIN 4 GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13 dB MINIMUM APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 500MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 29W BVDSS Drain
  – Source Breakdown Voltage 65V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensio.