D2008UK - Seme LAB

D2008UK METAL GATE RF SILICON FET

TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 5.08 (0.200) typ. 2 13 2.54 (0.100) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V .

Features

• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN
  – 13 dB MINIMUM 45˚ TO-39 PACKAGE PIN1
  – DRAIN PIN2
  – GATE PIN3
  – SOURCE APPLICATIONS
• VHF COMMUNICATIONS from DC to 400MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 14W BVDSS Drain
  – Source Breakdown Voltage 65V BVGSS Gate
  – Source Breakdown Voltage ±20V ID(sat) Drain Current 2A Tstg Storage Temperature
  –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone (01455) 556565.