D1963 - ROHM Electronics

D1963 2SD1963

2SD1963 Transistors Power transistor (50V, 3A) 2SD1963 zFeatures 1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 .

Features

1) Low saturation voltage, typically www.DataSheet4U.com VCE(sat) = −0.45V (Max.) at IC/IB = −1.5A / −0.15A. 2) Excellent DC current gain characteristics. 3) Complements the 2SB1308. zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 (1)Base (2)Collector (3)Emitter zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.5 2.0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W ∗1 ∗2 Collector power dissipation .