Ordering number:EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Suitable for sets whose height is restricted. · Low collector to emitter saturation volta.
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage.
· Large current capacity.
Package Dimensions
unit:mm 2049B
[2SB1270/2SD1906]
( ) : 2SB1270
Specifications
E : Emitter C : Collector B : Base SANYO :TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Ratings (
–)90 (
–)80 (
–)6 (
–)5 (
–)9 1.65 30 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1902 |
Sanyo |
2SD1902 | |
2 | D1903 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
3 | D1904 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors | |
4 | D1907 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors | |
5 | D1910 |
Wing Shing Electronic |
2SD1910 | |
6 | D1911 |
Wing Shing Computer Components |
2SD1911 | |
7 | D1912 |
Inchange Semiconductor |
2SD1912 | |
8 | D1913 |
Sanyo Semicon Device |
2SD1913 | |
9 | D1918 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
10 | D1918 |
Rohm |
2SD1918 | |
11 | D1929 |
Rohm |
2SD1929 | |
12 | D1933 |
Rohm |
2SD1933 |