D1911 - Wing Shing Computer Components

D1911 2SD1911

Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PFM CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter vo.

Features

tal power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V Tmb 25 MIN -65 - MAX 1500 600 5 10 50 150 150 UNIT V V A A A A W ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz Switching times(16KHz line deflecton circuit) Turn-off storage time Turn-off fall time CONDITIONS VBE = 0V; V.