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·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO.
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D1918 - Rohm
2SD1918 NPN 1.5A 160V Middle Power Transistor Parameter VCEO IC Value 160V 1.5A lFeatures 1) Suitable for Middle Powe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | D1910 |
Wing Shing Electronic |
2SD1910 |
|
| 2 | D1911 |
Wing Shing Computer Components |
2SD1911 |
|
| 3 | D1912 |
Inchange Semiconductor |
2SD1912 |
|
| 4 | D1913 |
Sanyo Semicon Device |
2SD1913 |
|
| 5 | D1902 |
Sanyo |
2SD1902 |
|
| 6 | D1903 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | D1904 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | D1906 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 9 | D1907 |
Sanyo |
PNP/NPN Epitaxial Planar Type Silicon Transistors |
|
| 10 | D1929 |
Rohm |
2SD1929 |
|
| 11 | D1933 |
Rohm |
2SD1933 |
|
| 12 | D1935 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Transistors |
|