D1069 - INCHANGE

D1069 Silicon NPN Power Transistor

·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base.

Features

100mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=B 0.5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.5A MIN TYP. MAX UNIT 150 V 300 V 6V 1.5 V 1.5 V 1 mA 10 18 MHz 1.8 V 1.0 μs isc Website：www.iscsemi.cn .