D1065C5 - Infineon

D1065C5 SiC Schottky Barrier diodes

ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Genera.

Features

 Revolutionary semiconductor material - Silicon Carbide
 Benchmark switching behavior
 No reverse recovery/ No forward recovery
 Temperature independent switching behavior
 High surge current capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC1) for target applications
 Breakdown voltage tested at 22 mA2)
 Optimized for high temperature operation Benefits
 System efficiency improvement over Si diodes
 System cost / size savings due to reduced cooling requirements
 Enabling higher frequency / increased power density solutions
 Higher system reliability du.