Ordering number:825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. · Wide ASO leading to high resistance to breakdo.
· Low-saturation collector-to-emitter voltage : VCE(sat) =
–0.5V max.
· Wide ASO leading to high resistance to breakdown.
Package Dimensions
unit:mm 2022A
[2SD829/2SD1065]
( ) : 2SB829
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | D1060 |
Sanyo Semicon Device |
2SD1060 | |
2 | D1061 |
Sanyo Semicon Device |
2SD1061 | |
3 | D1062 |
SavantIC |
2SD1062 | |
4 | D1062 |
Sanyo |
2SD1062 | |
5 | D1063 |
Sanyo |
2SD1063 | |
6 | D1064 |
Sanyo |
PNP/NPN Epitaxial Planar Silicon Tranasistors | |
7 | D1065C5 |
Infineon |
SiC Schottky Barrier diodes | |
8 | D1067 |
DMS |
monolithic step-down switch mode converter | |
9 | D1069 |
Toshiba Semiconductor |
2SD1069 | |
10 | D1069 |
Toshiba |
SILICON NPN DOUBLE DIFFUSED TYPE TRANSISTOR | |
11 | D1069 |
INCHANGE |
Silicon NPN Power Transistor | |
12 | D106C |
TOKO |
Fixed Inductors |