CY62147EV30 - Cypress Semiconductor

CY62147EV30 4-Mbit (256K x 16) Static RAM

The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL) in portable applications such as cellular telephones. The device To write to the device, take Chip Enable (CE) and Write Enable.

Features

Very high speed: 45 ns Temperature ranges
❐ Industrial:
  –40 °C to +85 °C
■ Wide voltage range: 2.20 V to 3.60 V
■ Pin compatible with CY62147DV30
■ Ultra low standby power
❐ Typical standby current: 1 A
❐ Maximum standby current: 7 A (Industrial)
■ Ultra low active power
❐ Typical active current: 2 mA at f = 1 MHz [1] and OE features
■ Easy memory expansion with CE
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■ also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselect.