CY62147CV18 - Cypress Semiconductor

CY62147CV18 256K x 16 Static RAM

of read and write modes. The CY62147CV18 is available in a 48-ball FBGA package. Functional Description The CY62147CV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL) in portable applications suc.

Features

• High speed — 55 ns and 70 ns availability
• Low voltage range: — 1.65V−1.95V
• Pin-compatible w/ CY62147BV18
• Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz
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• — Typical Active Current: 2 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a.