CY621472GN - Cypress Semiconductor

CY621472GN 4-Mbit (256K words x 16 bit) Static RAM

CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by asserting the chip enable (CE) input LOW. Dual chip enable devices are accessed by asse.

Features

■ High speed: 45 ns/55 ns
■ Ultra-low standby power
❐ Typical standby current: 3.5 A
❐ Maximum standby current: 8.7 A
■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V
■ 1.0-V data retention
■ TTL-compatible inputs and outputs
■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62147GN and CY621472GN are high-performance CMOS low-power (MoBL) SRAM devices organized as 256K Words by 16-bits. Both devices are offered in single and dual chip enable options and in multiple pin configurations. Devices with a single chip enable input are accessed by as.