CSD667 - CDIL

CSD667 NPN EPITAXIAL PLANAR SILICON TRANSISTOR

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current IC Peak PC Collector Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range CSD667 120 80 5.0 1.0 2.0 0.9 -55 to +150 CSD667A 120 100 5.0 1.0 2.0 0.9 -55 to +150 UNIT V V V A A W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg .

Features

A,VCE=5V
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* 60-320 60-200 DC Current Gain IC=500mA,VCE=5V
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* >30 >30 VCE(Sat) IC=500mA,IB=50mA
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* <1.0 <1.0 Collector Emitter Saturation Voltage VBE IC=150mA,VCE=5V
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* <1.5 <1.5 Base to Emitter Voltage Dynamic Characteristics ft IC=150mA,VCE=5V
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* typ140 typ140 Gain Bandwidth Product Cob VCB=10V, f=1MHz typ12 typ12 Output Capacitance CLASSIFICATION hFE
* hFE
*
*
*Pulse Test B 60-120 60-120 C 100-200 100-200 D 160-320 - www.DataSheet4U.com UNIT V V V uA V V MHz pF CSD667 CSD667A Continental Device India Limited Data Sheet Page 1 of 2 www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.c.