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The CSD60N53 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ● VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application .
● VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test
Application
● Power switching application
● load switching
CSD60N53
To-252 Top View
Schematic Diagram
VDS =60V ID = 88A
RDS(ON)= 5.5mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD60N53
CSD60N53
TO-252
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse) PD EAS
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CSD60N100 |
CASS |
N-Channel Trench Power MOSFET |
|
| 2 | CSD60N62 |
CASS |
N-Channel Trench Power MOSFET |
|
| 3 | CSD60N70 |
CASS |
N-Channel Trench Power MOSFET |
|
| 4 | CSD600 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | CSD600K |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 6 | CSD655 |
CDIL |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 7 | CSD667 |
CDIL |
NPN EPITAXIAL PLANAR SILICON TRANSISTOR |
|
| 8 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY |
|
| 9 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display |
|
| 10 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display |
|
| 11 | CSD-822E |
China Semiconductor |
(CSD-822E / CSD-823E) Digits Display |
|
| 12 | CSD-822G |
China Semiconductor |
(CSD-822G / CSD-823G) Digits Display |
|