CSD60N70 - CASS

CSD60N70 N-Channel Trench Power MOSFET

The CSD60N70 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency .

Features

● VDS=60V；ID=56A@ VGS=10V； RDS(ON)<9.0mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CSD60N70 To-252 Top View Schematic Diagram VDS = 60 V ID = 56A RDS(ON) = 7.5mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N70 CSD60N70 TO-252 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Curr.