Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB507, CSD313 CSB507 CSD313 www.DataSheet4U.com PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 1 2 3 B H F C E DIM .
pen collector) All dim insions in m m . K VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min max. 60 60 3.0 30 150 V V A W °C 1.0 V 40 320 VCBO VCEO VEBO max. max. max. 60 V 60 V 5.0 V Continental Device India Limited Data Sheet Page 1 of 3 CSB507, CSD313 www.DataSheet4U.com Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature THERMAL CHARACTERISTICS From junction to case CHARACTERISTICS Tamb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 20V IB = 0; VCE = 60V E.
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD3120H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts | |
2 | CSD3160H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts | |
3 | CSD3080H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts | |
4 | CSD30N210 |
CASS |
N-Channel Trench Power MOSFET | |
5 | CSD30N30 |
CASS |
N-Channel Trench Power MOSFET | |
6 | CSD30N30 |
INCHANGE |
N-Channel MOSFET | |
7 | CSD30N39 |
CASS |
N-Channel Trench Power MOSFET | |
8 | CSD30N55 |
CASS |
N-Channel Trench Power MOSFET | |
9 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY | |
10 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display | |
11 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display | |
12 | CSD-822E |
China Semiconductor |
(CSD-822E / CSD-823E) Digits Display |