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The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acq.
● VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Schematic Diagram Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD30N210
CSD30N210
TO-252
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CSD30N30 |
CASS |
N-Channel Trench Power MOSFET |
|
| 2 | CSD30N30 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | CSD30N39 |
CASS |
N-Channel Trench Power MOSFET |
|
| 4 | CSD30N55 |
CASS |
N-Channel Trench Power MOSFET |
|
| 5 | CSD3080H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts |
|
| 6 | CSD3120H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts |
|
| 7 | CSD313 |
CDIL |
PNP / NPN PLASTIC POWER TRANSISTOR |
|
| 8 | CSD313 |
RECTRON |
Power Transistors |
|
| 9 | CSD3160H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts |
|
| 10 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY |
|
| 11 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display |
|
| 12 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display |
|