The CSD30N39 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acqu.
● VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● PWM applications
● Load switch
● Power management
100% UIS TESTED! 100% ΔVds TESTED!
Schematic Diagram Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD30N39
CSD30N39
TO-252
Reel Size 325mm
Tape width 16mm
Quantity 2500
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSD30N30 |
CASS |
N-Channel Trench Power MOSFET | |
2 | CSD30N30 |
INCHANGE |
N-Channel MOSFET | |
3 | CSD30N210 |
CASS |
N-Channel Trench Power MOSFET | |
4 | CSD30N55 |
CASS |
N-Channel Trench Power MOSFET | |
5 | CSD3080H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts | |
6 | CSD3120H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts | |
7 | CSD313 |
CDIL |
PNP / NPN PLASTIC POWER TRANSISTOR | |
8 | CSD313 |
RECTRON |
Power Transistors | |
9 | CSD3160H |
Powerex Power Semiconductors |
Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts | |
10 | CSD-4xxx |
ETC |
NUMERIC/ALPHANUMBERIC DISPLAY | |
11 | CSD-822A9 |
China Semiconductor |
(CSD-822A9 / CSD-823A9) Digits Display | |
12 | CSD-822B7 |
China Semiconductor |
(CSD-822B7 / CSD-823B7) Digits Display |