CSD16414Q5 - Texas Instruments

CSD16414Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 16.6 nC Qgd Gate Charge Gate to Drain 4.4 nC RDS(on) Drain to Source On Resistance VGS = 4.5V VGS = 10V 2.1 mΩ 1.5 mΩ VG.

Features

1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5mm × 6mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain to Source Voltage 25 V Qg Gate Charge Total (4.5V) 16.6 nC Qgd Gate Charge Gate to.