CSD16412Q5A - Texas Instruments

CSD16412Q5A N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 2.9 Gate Charge Gate to Drain 0.7 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 2 V nC nC 13 mΩ 9 mΩ V.

Features

1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5mm x 6mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Control FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 2.9 Gate Charge Gate to Drain 0.7 Dr.