CSD16410Q5A - Texas Instruments

CSD16410Q5A N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, .

Features

1
•2 Ultra Low Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• Pb Free Terminal Plating
• RoHS Compliant
• Halogen Free
• SON 5mm x 6mm Plastic Package VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 3.9 Gate Charge Gate to Drain 1.1 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 1.9 V nC nC 9.6 mΩ 6.8 mΩ V APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Control FET Applications ORDERING INFORMATION Device Package Med.