CSD16408Q5 - Texas Instruments

CSD16408Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. S1 8D S2 7D S3 G4 D Top View 6D 5D P0094-01 16 14 12 10 8 6 4 2 0 0 ID = 25A TC = 125°C TC = 25°C 2 4 6 8 10 VGS − Gate to Source Voltage − V RDS(on) vs VGS 12 G006 Product Summary VDS Drain-to-source voltage 25 V Qg Gate charge, total (4.5.

Features

• Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• SON 5-mm × 6-mm Plastic Package 2 Applications
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Control FET Applications 3 Description The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. S1 8D S2 7D S3 G4 D Top View 6D 5D P0094-01 16 14 12 10 8 6 4 2 0 0 ID = 25A TC = 125°C TC = 25°C 2 4 6 8 10 VGS − Gate to Source Voltage − V RDS(on) vs VGS 12 G006 Product Summary VDS Drain-to-source voltage 25 V Qg Gate charge, tot.