CSD16407Q5 - Texas Instruments

CSD16407Q5 N-Channel Power MOSFET

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain-to0source voltage Qg Gate charge, total (4.5 V) Qgd Gate charge, gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage 25 V 13.3 nC 3.5 nC VGS = 4.5.

Features

1
•2 Ultralow Qg and Qgd
• Low Thermal Resistance
• Avalanche Rated
• SON 5-mm × 6-mm Plastic Package APPLICATIONS
• Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 PRODUCT SUMMARY VDS Drain-to0source voltage Qg Gate charge, total (4.5 V) Qgd Gate charge, gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage.