Chip Integration Technology Corporation CSB20S45CT-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Typ) 2x10A 45V 150OC 0.36V ■ Features • Low forward voltage drop. • Excellent high temperature stability. • Fast switching capability. • Suffix "G" indicates Halogen-free part, ex.CSΒ20S45CTG-A. • Lead-free pa.
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSΒ20S45CTG-A.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body over
passivated chip.
• Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed.
• Polarity: Color band denotes cathode end.
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
■ Outline
D2PAK(TO-263)
0.055(1.40) 0.031(0.80)
0.411(10.45) 0.380(9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSB20C04 |
Chino-Excel Technology |
20 AMPS. SCHOTTKY BARRIER RECTIFIERS | |
2 | CSB21 |
Connor-Winfield |
TCXO | |
3 | CSB22 |
Connor-Winfield |
TCXO | |
4 | CSB10100CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
5 | CSB1058 |
CDIL |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |
6 | CSB11 |
Connor-Winfield |
TCXO | |
7 | CSB12 |
Connor-Winfield |
TCXO | |
8 | CSB1370 |
Continental Device |
PNP Silicon Epitaxial Power Transistor | |
9 | CSB1370E |
RECTRON |
Power Transistors | |
10 | CSB16C04 |
Chino-Excel Technology |
16 AMPS. SCHOTTKY BARRIER RECTIFIERS | |
11 | CSB400 |
ETC |
CERAMIC RESONATOR | |
12 | CSB400P |
Murata |
CERAMIC RESONATOR |